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R5007ANJ
Transistors
10V Drive Nch MOSFET
R5007ANJ
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy.
13.1 9.0
3.0
1.0
1.24
0.78
(3)
5.08
2.7
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Source)
(1)
(2)
Each lead has same dimensions
Applications Switching
Packaging specifications
Package Code Type Basic ordering unit (pieces) Taping TL 1000
Inner circuit
R5007ANJ
1
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
3 1 3 1 2 2
Limits 500 30 7 28 7 28 3.5 3.5 40 150 -55 to +150
Unit V V A A A A A mJ W C C
(1)
(1) Gate (2) Drain (3) Source
(2)
1.2
2.54
0.4
(3) 1 Body Diode
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 3.13 Unit C/W
1/3
R5007ANJ
Transistors
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Min. - 500 - 2.5 - 2.5 - - - - - - - - - -
Typ. - - - - 0.8 - 500 300 23 20 22 50 25 13 3.5 5.5
Max. 100 - 100 4.5 1.05 - - - - - - - - - - -
Unit nA V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V ID=3.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=3.5A, VDD 250V VGS=10V RL=71.4 RG=10 VDD 250V ID=7A VGS=10V RL=35.7 / RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.5
Unit V
Conditions IS= 7A, VGS=0V
2/3
R5007ANJ
Transistors
Switching characteristics measurement circuit
Fig.1 Switching time measurement circuit
Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit
Fig.4 Gate charge waveform
Fig.5 Avalanche measurement circuit
Fig.6 Avalanche waveform
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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